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| AP13P15GS/P Pb Free Plating Product Advanced Power Electronics Corp. Lower On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -150V 300m -13A Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP13P15GP) are available for low-profile applications. G D GD S TO-263(S) TO-220(P) S Rating -150 20 -13 -8.2 52 96 0.77 Units V V A A A W W/ Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 1.3 62 Units /W /W Data and specifications subject to change without notice 200728051-1/4 AP13P15GS/P Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-1mA 2 Min. -150 -1 - Typ. -0.1 6 38 5 15 11 21 60 36 220 60 3.5 Max. Units 300 -3 -25 -100 100 60 5 V V/ m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=150oC) VGS=-10V, ID=-7A VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-150V, VGS=0V VDS=-120V, VGS=0V VGS= 20V ID=-7A VDS=-120V VGS=-10V VDS=-75V ID=-7A RG=10,VGS=-10V RD=10.7 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1210 1940 Source-Drain Diode Symbol VSD trr Qrr Parameter Forward On Voltage 2 2 Test Conditions IS=-7A, VGS=0V IS=-7A, VGS=0V, dI/dt=-100A/s Min. - Typ. 110 620 Max. Units -1.3 V ns nC Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. 2/4 AP13P15GS/P 25 25 T C =25 o C 20 -10V -7.0V 20 TC=150oC -ID , Drain Current (A) -10V -7.0V -ID , Drain Current (A) 15 15 -5.0V 10 -5.0V 10 -4.5V 5 -4.5V 5 V G = - 3 .0V 0 V G = - 3 .0V 0 25 0 5 10 15 20 25 0 5 10 15 20 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1400 2.3 I D = -7 A T C =25 1000 I D =- 7 A V G =-10V 1.8 Normalized RDS(ON) RDS(ON) (m ) 1.3 600 0.8 200 2 4 6 8 10 0.3 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( o C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 6 Normalized -VGS(th) (V) 4 1.1 T j =150 C -IS(A) o T j =25 C o 2 0.7 0 0 0.2 0.4 0.6 0.8 1 1.2 0.3 -50 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP13P15GS/P f=1.0MHz 12 10000 10 -VGS , Gate to Source Voltage (V) 8 I D = -7A V DS = -120V 1000 C iss 6 C (pF) C oss 100 4 C rss 2 0 0 10 20 30 40 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 10 0.2 1ms -ID (A) 0.1 0.1 0.05 1 10ms 100ms DC T C =25 o C Single Pulse PDM t 0.02 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 Single Pulse 0.1 0.1 1 10 100 1000 0.01 0.00001 0.0001 0.001 0.01 0.1 1 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 8 VG V DS =-5V 6 QG T j =25 o C T j =150 o C -ID , Drain Current (A) -10V QGS QGD 4 2 Charge 0 Q 0 2 4 6 -V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform 4/4 |
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